ABS20M-T Datasheet (Taiwan Semiconductor) - 2A 1000V Glass Passivated Bridge Rectifier

ABS20M-T, 2A 1000V Glass Passivated Bridge Rectifier

Green compound 2 Version:B1708 AVERAGE FORWARD CURRENT (A) CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve 2.5 ABS20M-T Taiwan Semiconductor Fig.2 Typical Junction Capacitance 100 JUNCTION CAPACITANCE (pF) a 2 1.5 10 1 0.5 On Aluminum substrate

ABS20M-T Features

* Glass passivated junction

* Ideal for automated placement

* Reliable low cost construction utilizing molded plastic technique

* High surge current capability

* UL Recognized File # E-326854

* Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC