TSG25N120CN - N-Channel IGBT

Taiwan Semiconductor

TSG25N120CN Datasheet Preview — Preview of TSG25N120CN PDF

Datasheet Details

Part number	TSG25N120CN
Manufacturer	Taiwan Semiconductor ↗
File Size	417.69 KB
Description	N-Channel IGBT
Datasheet	TSG25N120CN-TaiwanSemiconductor.pdf

TSG25N120CN Product details

Description

The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features

1200V NPT Trench Technology High Speed Switching Low Conduction Loss Block Diagram Ordering Information Part No. TSG25N120CN C0 Package TO-3PN Packing 30pcs / Tube NPT Trench IGBT Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current.
Diode Forward Current (TC=100℃) Diode Pulse Forward Current Max Power Dissipation Operating Junction Temperature Storage Temperature.

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Published: Jul 10, 2014 |