TSG25N120CN Datasheet - Taiwan Semiconductor

TSG25N120CN N-Channel IGBT

The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction he.

TSG25N120CN Features

* 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Block Diagram Ordering Information Part No. TSG25N120CN C0 Package TO-3PN Packing 30pcs / Tube NPT Trench IGBT Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Collector-Emitter Voltage Gate

TSG25N120CN Datasheet (417.69 KB)