TSG40N120CE N-Channel IGBT

Taiwan Semiconductor

Description

TSG40N120CE N-Channel IGBT with FRD.TO-264 Pin Definition: 1.Gate 2.Collector 3.Emitter PRODUCT SUMMARY VCES (V) 1200 VGES (V) ±20 IC (A) 40 G.
The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances,.

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Datasheet Specifications

Part number: TSG40N120CE
Manufacturer: Taiwan Semiconductor
File Size: 661.94 KB
Datasheet: TSG40N120CE-TaiwanSemiconductor.pdf
Description: N-Channel IGBT

Features

* 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Block Diagram Ordering Information Part No. TSG40N120CE C0 Package TO-264 Packing 25pcs / Tube NPT Trench IGBT Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Collector-Emitter Voltage Gate

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 9/10 Version: B12 TSG40N120CE N-Channel IGBT with FRD. 10/10 B12 Version:

TSG40N120CE Distributors

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TSG40N120CE N-Channel IGBT Taiwan Semiconductor

Taiwan Semiconductor TSG40N120CE-like datasheet