TSG40N120CE - N-Channel IGBT

Taiwan Semiconductor

TSG40N120CE Datasheet Preview — Preview of TSG40N120CE PDF

Datasheet Details

Part number	TSG40N120CE
Manufacturer	Taiwan Semiconductor ↗
File Size	661.94 KB
Description	N-Channel IGBT
Datasheet	TSG40N120CE-TaiwanSemiconductor.pdf

TSG40N120CE Product details

Description

The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features

1200V NPT Trench Technology High Speed Switching Low Conduction Loss Block Diagram Ordering Information Part No. TSG40N120CE C0 Package TO-264 Packing 25pcs / Tube NPT Trench IGBT Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current.
Diode Forward Current (TC=100℃) Diode Pulse Forward Current Max Power Dissipation Operating Junction Temperature Storage Temperature.

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Published: Jul 10, 2014 |