TSG15N120CN Datasheet - Taiwan Semiconductor

TSG15N120CN, N-Channel IGBT

TSG15N120CN N-Channel IGBT with FRD.TO-3PN Pin Definition: 1.Gate 2.Collector 3.Emitter PRODUCT SUMMARY VCES (V) 1200 VGES (V) ±20 IC (A) 15 G.
The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances,.

Features

* 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Block Diagram Ordering Information Part No. TSG15N120CN C0 Package TO-3PN Packing 30pcs / Tube NPT Trench IGBT Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Collector-Emitter Voltage Gate

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 9/9 Version: B12

TSG15N120CN-TaiwanSemiconductor.pdf