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TSG65N195CE Datasheet - Taiwan Semiconductor

TSG65N195CE Power Transistor

TSG65N195CE Features

* 650 V enhancement mode power transistor

* 850 V transient drain-to-source voltage

* Bottom-cooled 8x8 mm PDFN package

* RDS(on)(Typ) = 150 mΩ

* DS(max) = 11 A / IDS(Max pulse) = 19A

* Ultra-low FOM

* Simple gate drive requirements (0 V to 6 V)

* Transient tolerant g

TSG65N195CE-TaiwanSemiconductor.pdf

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Datasheet Details

Part number:

TSG65N195CE

Manufacturer:

Taiwan Semiconductor

File Size:

895.95 KB

Description:

Power transistor.

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TSG65N195CE TSG65N195CE Power Transistor Taiwan Semiconductor

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