TSM080N03E Datasheet (Taiwan Semiconductor)

TSM080N03E, N-Channel Power MOSFET

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TSM080N03E Features

* Fast switching

* 100% EAS Guaranteed

* Green Device Available

* G-S ESD Protection Diode Embedded APPLICATION

* Vcore / MB

* POL Application

* SMPS 2nd SR KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 10V VGS = 4.5V Qg 30 8 12.5 7.5 V