TSM080N03PQ56 Datasheet - Taiwan Semiconductor

TSM080N03PQ56 N-Channel Power MOSFET

only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC pr.

TSM080N03PQ56 30V N-Channel Power MOSFET PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = 10V VGS = 4.5V Qg 30 8 12.5 7.5 Ordering Information Part No. Package Packing TSM080N03PQ56 RLG PDFN56 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm an.

TSM080N03PQ56 Datasheet (539.38 KB)