TSM260P02CX6 Datasheet - Taiwan Semiconductor

TSM260P02CX6 P-Channel Power MOSFET

TSM260P02CX6 Features

* Fast switching

* Suitable for -1.8V Gate Drive Applications

* Pb-free plating

* RoHS compliant

* Halogen-free mold compound APPLICATION

* Battery Pack

* Portable Devices KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS -20 V ID -6.5 A VGS = -4.5V 26 RDS(o

Datasheet Details

TSM260P02CX6

Taiwan Semiconductor

354.31 KB

P-channel power mosfet.

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