TSM2301 Datasheet, Mosfet, Taiwan Semiconductor Company

TSM2301 Features

• Mosfet Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagr

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Part number:

TSM2301

Manufacturer:

Taiwan Semiconductor Company

File Size:

200.90kb

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📄 Datasheet

Description:

20v p-channel enhancement mode mosfet.

TAGS

TSM2301

Taiwan Semiconductor Company

📁 Related Datasheet

TSM2301A - 20V P-Channel MOSFET (Taiwan Semiconductor)
TSM2301A 20V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 130 @ VGS =-4.5V -20 190 @ VGS =-.

TSM2301B - 20V P-Channel MOSFET (Taiwan Semiconductor Company)
TSM2301B 20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 100 @ VGS = -4.5V -20 150 @ VGS = -2.5V 190 @ VGS = -1.8V SOT-23 Pin Definition: 1..

TSM2302 - 20V N-Channel Enhancement Mode MOSFET (Taiwan Semiconductor Company)
TSM2302 20V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS.

TSM2302CX - N-Channel Power MOSFET (Taiwan Semiconductor)
TSM2302CX Taiwan Semiconductor N-Channel Power MOSFET 20V, 3.9A, 65mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fas.

TSM2303 - P-Channel Power MOSFET (Taiwan Semiconductor)
TSM2303 30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 180 @ VGS =-10V -30 300 @ VGS.

TSM2305 - P-Channel Power MOSFET (Taiwan Semiconductor)
TSM2305 20V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 52 @ VGS =-4.5V -20 71 @ VGS.

TSM2306 - 30V N-Channel MOSFET (Taiwan Semiconductor Company)
30V N-Channel MOSFET SOT-23 .. TSM2306 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 57 @ VGS.

TSM2307 - 30V P-Channel MOSFET (Taiwan Semiconductor Company)
30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain .. TSM2307 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 80 @ VGS.

TSM2307CX - 30V P-Channel MOSFET (Taiwan Semiconductor)
TSM2307CX 30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) V.

TSM2308 - N-Channel Power MOSFET (Taiwan Semiconductor)
TSM2308 60V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 156 @ VGS = 10V 60 192 @ VGS .