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TSM2305

P-Channel Power MOSFET

TSM2305 Features

* Advance Trench Process Technology

* High Density Cell Design for Ultra Low On-resistance Application

* Battery Management

* High Speed Switch Ordering Information Part No. Package Packing TSM2305CX RFG SOT-23 3Kpcs / 7” Reel Note: “G” denotes Halogen Free Product. Block Diag

TSM2305 General Description

only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC pr.

TSM2305 Datasheet (375.16 KB)

Preview of TSM2305 PDF

Datasheet Details

Part number:

TSM2305

Manufacturer:

Taiwan Semiconductor

File Size:

375.16 KB

Description:

P-channel power mosfet.
TSM2305 20V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 52 @ VGS =-4.5V -20 71 @ VGS.

📁 Related Datasheet

TSM2301 - 20V P-Channel Enhancement Mode MOSFET (Taiwan Semiconductor Company)
TSM2301 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =130mΩ RDS .

TSM2301A - 20V P-Channel MOSFET (Taiwan Semiconductor)
TSM2301A 20V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 130 @ VGS =-4.5V -20 190 @ VGS =-.

TSM2301B - 20V P-Channel MOSFET (Taiwan Semiconductor Company)
TSM2301B 20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 100 @ VGS = -4.5V -20 150 @ VGS = -2.5V 190 @ VGS = -1.8V SOT-23 Pin Definition: 1..

TSM2302 - 20V N-Channel Enhancement Mode MOSFET (Taiwan Semiconductor Company)
TSM2302 20V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS.

TSM2302CX - N-Channel Power MOSFET (Taiwan Semiconductor)
TSM2302CX Taiwan Semiconductor N-Channel Power MOSFET 20V, 3.9A, 65mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fas.

TSM2303 - P-Channel Power MOSFET (Taiwan Semiconductor)
TSM2303 30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 180 @ VGS =-10V -30 300 @ VGS.

TSM2306 - 30V N-Channel MOSFET (Taiwan Semiconductor Company)
30V N-Channel MOSFET SOT-23 .. TSM2306 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 57 @ VGS.

TSM2307 - 30V P-Channel MOSFET (Taiwan Semiconductor Company)
30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain .. TSM2307 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 80 @ VGS.

TAGS

TSM2305 P-Channel Power MOSFET Taiwan Semiconductor

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