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TSM20N50 500V N-Channel Power MOSFET

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Description

TSM20N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 500 0.3 @ VGS =10V .
The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

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Datasheet Specifications

Part number
TSM20N50
Manufacturer
Taiwan Semiconductor
File Size
417.30 KB
Datasheet
TSM20N50-TaiwanSemiconductor.pdf
Description
500V N-Channel Power MOSFET

Features

* Low RDS(ON) 0.3Ω (Max. ) Low gate charge typical @ 54nC (Typ. ) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM20N50CZ C0 TSM20N50CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless ot

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 10/10 A12 Free Datasheet http://www. datasheetlist. com/ Version:

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