TSM220NB06CR Datasheet - Taiwan Semiconductor

TSM220NB06CR N-Channel Power MOSFET

TSM220NB06CR Features

* Low RDS(ON) to minimize conductive losses

* Low gate charge for fast power switching

* 100% UIS and Rg tested.

* 175°C Operating junction temperature

* RoHS Compliant

* Halogen-free KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 60 V RDS(on) (max) VGS = 10V 22

Datasheet Details

TSM220NB06CR

Taiwan Semiconductor

325.81 KB

N-channel power mosfet.

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