TSM220NB06CR N-Channel Power MOSFET

Taiwan Semiconductor

Description

TSM220NB06CR Taiwan Semiconductor N-Channel Power MOSFET 60V, 35A, 22mΩ .

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Datasheet Specifications

Part number: TSM220NB06CR
Manufacturer: Taiwan Semiconductor
File Size: 325.81 KB
Datasheet: TSM220NB06CR-TaiwanSemiconductor.pdf
Description: N-Channel Power MOSFET

Features

* Low RDS(ON) to minimize conductive losses
* Low gate charge for fast power switching
* 100% UIS and Rg tested.
* 175°C Operating junction temperature
* RoHS Compliant
* Halogen-free KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 60 V RDS(on) (max) VGS = 10V 22

Applications

* BLDC Motor Control
* Battery Power Management
* DC-DC converter
* Secondary Synchronous Rectification PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 6

TSM220NB06CR Distributors

📁 Related Datasheet

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N-Channel Power MOSFET Taiwan Semiconductor

Taiwan Semiconductor TSM220NB06CR-like datasheet