TSM220NB06CR Datasheet - Taiwan Semiconductor

TSM220NB06CR, N-Channel Power MOSFET

TSM220NB06CR Taiwan Semiconductor N-Channel Power MOSFET 60V, 35A, 22mΩ .

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TSM220NB06CR-TaiwanSemiconductor.pdf

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Datasheet Details

Part number:

TSM220NB06CR

Manufacturer:

Taiwan Semiconductor

File Size:

325.81 KB

Description:

N-Channel Power MOSFET

Features

* Low RDS(ON) to minimize conductive losses
* Low gate charge for fast power switching
* 100% UIS and Rg tested.
* 175°C Operating junction temperature
* RoHS Compliant
* Halogen-free KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 60 V RDS(on) (max) VGS = 10V 22

Applications

* BLDC Motor Control
* Battery Power Management
* DC-DC converter
* Secondary Synchronous Rectification PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 6

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TSM220NB06CR N-Channel Power MOSFET Taiwan Semiconductor

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