Datasheet Details
- Part number
- TSM220NB06CR
- Manufacturer
- Taiwan Semiconductor
- File Size
- 325.81 KB
- Datasheet
- TSM220NB06CR-TaiwanSemiconductor.pdf
- Description
- N-Channel Power MOSFET
TSM220NB06CR Description
TSM220NB06CR Taiwan Semiconductor N-Channel Power MOSFET 60V, 35A, 22mΩ .
TSM220NB06CR Features
* Low RDS(ON) to minimize conductive losses
* Low gate charge for fast power switching
* 100% UIS and Rg tested.
* 175°C Operating junction temperature
* RoHS Compliant
* Halogen-free
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS
60
V
RDS(on) (max) VGS = 10V
22
TSM220NB06CR Applications
* BLDC Motor Control
* Battery Power Management
* DC-DC converter
* Secondary Synchronous Rectification
PDFN56
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
6
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