TSM210N06

N-Channel Power MOSFET

Taiwan Semiconductor

TSM210N06 Features

* Advanced Trench Technology

* Low RDS(ON) 3.1mΩ (Max.)

* Low gate charge typical @ 160nC (Typ.)

* Low Crss typical @ 300pF (Typ.) Ordering Information Part No. TSM210N06CZ C0 Package TO-220 Packing 50pcs / Tube Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC

TSM210N06 General Description

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TSM210N06 Datasheet (56.56 KB)

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Datasheet Details

Part number:

TSM210N06

Manufacturer:

Taiwan Semiconductor

File Size:

56.56 KB

Description:

N-channel power mosfet.
TO-220 Pin Definition: 1. Gate 2. Drain 3. Source TSM210N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 3.1 @ VGS =10V ID.

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TSM210N06 N-Channel Power MOSFET Taiwan Semiconductor

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TSM210N06 Features

TSM210N06 General Description

Datasheet Details

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