Datasheet Details
- Part number
- TSM210N06
- Manufacturer
- Taiwan Semiconductor
- File Size
- 56.56 KB
- Datasheet
- TSM210N06-TaiwanSemiconductor.pdf
- Description
- N-Channel Power MOSFET
TSM210N06 Description
TO-220 Pin Definition: 1.Gate 2.Drain 3.Source TSM210N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 3.1 @ VGS =10V ID.
only.
TSM210N06 Features
* Advanced Trench Technology
* Low RDS(ON) 3.1mΩ (Max. )
* Low gate charge typical @ 160nC (Typ. )
* Low Crss typical @ 300pF (Typ. )
Ordering Information
Part No. TSM210N06CZ C0
Package
TO-220
Packing
50pcs / Tube
Block Diagram
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC
TSM210N06 Applications
* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A12
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