TSM210N06 N-Channel Power MOSFET

Taiwan Semiconductor

Description

TO-220 Pin Definition: 1.Gate 2.Drain 3.Source TSM210N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 3.1 @ VGS =10V ID.
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Datasheet Specifications

Part number: TSM210N06
Manufacturer: Taiwan Semiconductor
File Size: 56.56 KB
Datasheet: TSM210N06-TaiwanSemiconductor.pdf
Description: N-Channel Power MOSFET

Features

* Advanced Trench Technology
* Low RDS(ON) 3.1mΩ (Max. )
* Low gate charge typical @ 160nC (Typ. )
* Low Crss typical @ 300pF (Typ. ) Ordering Information Part No. TSM210N06CZ C0 Package TO-220 Packing 50pcs / Tube Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A12

TSM210N06 Distributors

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TSM210N06 N-Channel Power MOSFET Taiwan Semiconductor

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