TSM210N06 Datasheet - Taiwan Semiconductor

TSM210N06, N-Channel Power MOSFET

TO-220 Pin Definition: 1.Gate 2.Drain 3.Source TSM210N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 3.1 @ VGS =10V ID.
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TSM210N06-TaiwanSemiconductor.pdf

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Datasheet Details

Part number:

TSM210N06

Manufacturer:

Taiwan Semiconductor

File Size:

56.56 KB

Description:

N-Channel Power MOSFET

Features

* Advanced Trench Technology
* Low RDS(ON) 3.1mΩ (Max. )
* Low gate charge typical @ 160nC (Typ. )
* Low Crss typical @ 300pF (Typ. ) Ordering Information Part No. TSM210N06CZ C0 Package TO-220 Packing 50pcs / Tube Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A12

TSM210N06 Distributors

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TSM210N06 N-Channel Power MOSFET Taiwan Semiconductor

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