TSM210N06 Datasheet, Mosfet, Taiwan Semiconductor

TSM210N06 Features

• Mosfet
• Advanced Trench Technology
• Low RDS(ON) 3.1mΩ (Max.)
• Low gate charge typical @ 160nC (Typ.)
• Low Crss typical @ 300pF (Typ.) Ordering Information

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Part number:

TSM210N06

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Taiwan Semiconductor

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📄 Datasheet

Description:

N-channel power mosfet. only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s te

TSM210N06 Application

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TSM210N06

Taiwan Semiconductor

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