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TSM210N06 - N-Channel Power MOSFET

TSM210N06 Description

TO-220 Pin Definition: 1.Gate 2.Drain 3.Source TSM210N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 3.1 @ VGS =10V ID.
only.

TSM210N06 Features

* Advanced Trench Technology
* Low RDS(ON) 3.1mΩ (Max. )
* Low gate charge typical @ 160nC (Typ. )
* Low Crss typical @ 300pF (Typ. ) Ordering Information Part No. TSM210N06CZ C0 Package TO-220 Packing 50pcs / Tube Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC

TSM210N06 Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A12

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Datasheet Details

Part number
TSM210N06
Manufacturer
Taiwan Semiconductor
File Size
56.56 KB
Datasheet
TSM210N06-TaiwanSemiconductor.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM210N06-like datasheet