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TSM210N06 Datasheet - Taiwan Semiconductor

TSM210N06 - N-Channel Power MOSFET

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TSM210N06 Features

* Advanced Trench Technology

* Low RDS(ON) 3.1mΩ (Max.)

* Low gate charge typical @ 160nC (Typ.)

* Low Crss typical @ 300pF (Typ.) Ordering Information Part No. TSM210N06CZ C0 Package TO-220 Packing 50pcs / Tube Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC

TSM210N06-TaiwanSemiconductor.pdf

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Datasheet Details

Part number:

TSM210N06

Manufacturer:

Taiwan Semiconductor

File Size:

56.56 KB

Description:

N-channel power mosfet.

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