TSM60NB260 Datasheet - Taiwan Semiconductor

TSM60NB260 N-Channel Power MOSFET

TSM60NB260 Features

* Super-Junction technology

* High performance, small RDS(ON)

* Qg figure of merit (FOM)

* High ruggedness performance

* 100% UIS tested

* High commutation performance

* Pb-free plating

* Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC

* H

Datasheet Details

TSM60NB260

Taiwan Semiconductor

609.23 KB

N-channel power mosfet.

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