TSM6025 Datasheet, Reference, Touchstone Semiconductor

TSM6025 Features

• Reference           Alternate Source for MAX6025 Initial Accuracy: 0.2% (max)
    – TSM6025A 0.4% (max)
    – TSM6025B Temperature Coefficient: 15ppm/°C (max)

PDF File Details

Part number:

TSM6025

Manufacturer:

Touchstone Semiconductor

File Size:

784.81kb

Download:

📄 Datasheet

Description:

Low-power/low-dropout precision voltage reference. The TSM6025 is a 3-terminal, series-mode 2.5-V precision voltage reference and is a pin-for-pin, alternate source for the MAX6025 vol

TSM6025 Application

• Applications The TSM6025 is fully specified over the -40°C to +85°C temperature range and is available in a 3-pin SOT23 package. APPLICATIONS Indu

TAGS

TSM6025

Touchstone Semiconductor

📁 Related Datasheet

TSM6025 - Low-Power/Low-Dropout Precision Voltage Reference (Silicon Laboratories)
TSM6025 A +2.5V, Low-Power/Low-Dropout Precision Voltage Reference FEATURES  Alternate Source for MAX6025  Initial Accuracy: 0.2% (max) – TSM6025A .

TSM600-250F - Resettable PPTC (Littelfuse)
TS Series PolySwitch® Resettable PPTCs Tele > Surface Mount > TS Series RoHS Features • Resettable overcurrent protection • Fast time-to-trip • R.

TSM600-250F-RA - Resettable PPTC (Littelfuse)
TS Series PolySwitch® Resettable PPTCs Tele > Surface Mount > TS Series RoHS Features • Resettable overcurrent protection • Fast time-to-trip • R.

TSM600-400F - Resettable PPTC (Littelfuse)
TS Series PolySwitch® Resettable PPTCs Tele > Surface Mount > TS Series RoHS Features • Resettable overcurrent protection • Fast time-to-trip • R.

TSM600N25E - N-Channel Power MOSFET (Taiwan Semiconductor)
TSM600N25E 250V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter.

TSM600P03CS - P-Channel Power MOSFET (Taiwan Semiconductor)
TSM600P03CS 30V P-Channel Power MOSFET SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Par.

TSM60N03 - N-Channel Power MOSFET (Taiwan Semiconductor)
TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source TSM60N03 30V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 4.5 @ VGS =1.

TSM60N06 - N-Channel Power MOSFET (Taiwan Semiconductor)
TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source TSM60N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 7.3 @ VGS =1.

TSM60N1R4 - N-Channel Power MOSFET (Taiwan Semiconductor)
TO-252 (DPAK) TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source TSM60N1R4 600V, 3.3A, 1.4Ω N-Channel Power MOSFET Key Parameter Performance.

TSM60N380 - N-Channel Power MOSFET (Taiwan Semiconductor)
ITO-220 TO-252 (DPAK) TSM60N380 600V, 11A, 0.38Ω N-Channel Power MOSFET TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Per.