TSM60N03 Datasheet, Mosfet, Taiwan Semiconductor

TSM60N03 Features

• Mosfet
• Advanced Trench Technology
• Low RDS(ON) 4.5mΩ (Max.)
• Low gate charge typical @ 12nC (Typ.)
• Low Crss typical @ 140pF (Typ.) Ordering Information

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TSM60N03

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Taiwan Semiconductor

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📄 Datasheet

Description:

N-channel power mosfet. only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s te

TSM60N03 Application

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TSM60N03

Taiwan Semiconductor

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