TSM60N06 Datasheet - Taiwan Semiconductor

N-Channel Power MOSFET

TSM60N06 Features

* Advanced Trench Technology

* Low RDS(ON) 7.3mΩ (Max.)

* Low gate charge typical @ 81nC (Typ.)

* Low Crss typical @ 339pF (Typ.) Ordering Information Part No. Package Packing TSM60N06CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Block Diagram N-C

TSM60N06 General Description

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TSM60N06 Datasheet (262.33 KB)

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Datasheet Details

Part number:

TSM60N06

Manufacturer:

Taiwan Semiconductor

File Size:

262.33 KB

Description:

N-channel power mosfet.
TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source TSM60N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 7.3 @ VGS =1.

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TSM60N06 N-Channel Power MOSFET Taiwan Semiconductor

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TSM60N06 Features

TSM60N06 General Description

Datasheet Details

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