TSM60N06 Datasheet - Taiwan Semiconductor

TSM60N06 N-Channel Power MOSFET

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TSM60N06 Features

* Advanced Trench Technology

* Low RDS(ON) 7.3mΩ (Max.)

* Low gate charge typical @ 81nC (Typ.)

* Low Crss typical @ 339pF (Typ.) Ordering Information Part No. Package Packing TSM60N06CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Block Diagram N-C

TSM60N06 Datasheet (262.33 KB)