TSM60NB099CZ N-Channel Power MOSFET

Taiwan Semiconductor

Description

TSM60NB099CZ Taiwan Semiconductor N-Channel Power MOSFET 600V, 38A, 99mΩ .

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Datasheet Specifications

Part number: TSM60NB099CZ
Manufacturer: Taiwan Semiconductor
File Size: 338.43 KB
Datasheet: TSM60NB099CZ-TaiwanSemiconductor.pdf
Description: N-Channel Power MOSFET

Features

* Super-Junction technology
* High performance, small RDS(ON)
* Qg figure of merit (FOM)
* High ruggedness performance
* 100% UIS and Rg tested
* Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
* Halogen-free according to IEC 61249-2-21 KEY PERF

Applications

* PFC stage
* Server/Telecom Power
* Charging Station
* Inverter
* Power Supply TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current (Note 1) TC = 2

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📁 Related Datasheet

TSM600-250F TSM600-250F-RA TSM600-400F TSM6025 TSM6866D TSM6866SD

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TSM60NB099CZ N-Channel Power MOSFET Taiwan Semiconductor

Taiwan Semiconductor TSM60NB099CZ-like datasheet