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TSM076NH04DCR Power Transistor

TSM076NH04DCR Description

Power Transistor .

TSM076NH04DCR Features

* Ultra-low On-resistance
* Wettable Flank leads for Enhanced AOI
* 100% UIS and Rg tested
* 175°C Operating Junction Temperature
* RoHS Compliant

TSM076NH04DCR Applications

* DC-DC Converters
* Solenoid and Motor Drivers
* Load Switch PDFN56U Dual TSM076NH04DCR Taiwan Semiconductor PRODUCT SUMMARY PARAMETER VALUE VDS 40 VGS = 10V 7.6 RDS(on) (max) VGS = 7V 9.1 Qg VGS = 10V 19 UNIT V mΩ nC Note: MSL 1 (Moisture Sensitivity Level) per J-STD-0

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Power Transistor Taiwan Semiconductor
Taiwan Semiconductor TSM076NH04DCR-like datasheet