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TSM120NA03CR N-Channel Power MOSFET

TSM120NA03CR Description

TSM120NA03CR Taiwan Semiconductor N-Channel Power MOSFET 30V, 39A, 11.7mΩ .

TSM120NA03CR Features

* Low RDS(ON) to minimize conductive loss
* Low gate charge for fast power switching
* 100% UIS and Rg tested
* Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC

TSM120NA03CR Applications

* DC-DC Converters
* Battery Power Management
* ORing FET/Load Switch KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT RDS(on) (max) VDS VGS = 10V VGS = 4.5V Qg 30 11.7 14.9 4.5 V mΩ nC PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA =

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N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM120NA03CR-like datasheet