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FQP65N06 N-Channel Power MOSFET

FQP65N06 Description

FQP65N06 ® FQP65N06 Pb Pb Free Plating Product 65A,60V Heatsink Planar N-Channel Power MOSFET .
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line.

FQP65N06 Features

* 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V
* Low gate charge ( typical 48 nC)
* Low Crss ( typical 100 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating 1. Gate { { 2. Drain

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Datasheet Details

Part number
FQP65N06
Manufacturer
Thinki Semiconductor
File Size
1.12 MB
Datasheet
FQP65N06-ThinkiSemiconductor.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Thinki Semiconductor
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