Datasheet Specifications
- Part number
- 1SS401
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 172.91 KB
- Datasheet
- 1SS401_ToshibaSemiconductor.pdf
- Description
- Silicon Diode
Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS401 High Speed Switching Applications 1SS401 Unit: mm z Low forward voltage z Low reverse c.Applications
* 1SS401 Unit: mm z Low forward voltage z Low reverse current z Small total capacitance : VF (3) = 0.38 V (typ. ) : IR = 50μA (max) : CT = 46 pF (typ. ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward c1SS401 Distributors
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