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1SS154 - Silicon Epitaxial Schottky Barrier Type Diode

1SS154 Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 1SS154 UHF~S Band Mixer/Detector Applications * Small package.Absolute Maxim.

1SS154 Applications

* Small package. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage temperature range VR 6 V IF 30 mA Tj 125 °C Tstg
* 30 to 125 °C Note: Using continuously under heavy loads (e. g. th

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Silicon Epitaxial Schottky Barrier Type Diode Toshiba Semiconductor
Toshiba Semiconductor 1SS154-like datasheet