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1SS154 Datasheet - Toshiba Semiconductor

1SS154 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 1SS154 UHF~S Band Mixer/Detector Applications Small package. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage temperature range VR 6 V IF 30 mA Tj 125 °C Tstg 30 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature.

1SS154_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SS154

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

143.59 KB

Description:

Silicon epitaxial schottky barrier type diode.

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1SS154 1SS154 Silicon Epitaxial Schottky Barrier Type Diode Toshiba Semiconductor

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