1SS154 Silicon Epitaxial Schottky Barrier Type Diode

Toshiba Semiconductor

Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 1SS154 UHF~S Band Mixer/Detector Applications * Small package.Absolute Maxim.

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Datasheet Specifications

Part number: 1SS154
Manufacturer: Toshiba ↗ Semiconductor
File Size: 143.59 KB
Datasheet: 1SS154_ToshibaSemiconductor.pdf
Description: Silicon Epitaxial Schottky Barrier Type Diode

Applications

* Small package. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage temperature range VR 6 V IF 30 mA Tj 125 °C Tstg
* 30 to 125 °C Note: Using continuously under heavy loads (e. g. th

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1SS154 Silicon Epitaxial Schottky Barrier Type Diode Toshiba Semiconductor

Toshiba Semiconductor 1SS154-like datasheet