1SS154 - Silicon Epitaxial Schottky Barrier Type Diode
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 1SS154 UHF~S Band Mixer/Detector Applications Small package.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage temperature range VR 6 V IF 30 mA Tj 125 °C Tstg 30 to 125 °C Note: Using continuously under heavy loads (e.g.
the application of high temperature/current/voltage and the significant change in temperature
