1SS193 Datasheet - Toshiba Semiconductor

1SS193 Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Ultra High Speed Switching Application AEC-Q101 Qualified (Note1) Small package : SC-59 Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Note1: For detail information, please contact to our sales. 1SS193 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Re.

1SS193_ToshibaSemiconductor.pdf