1SS196 Datasheet - Toshiba Semiconductor

1SS196 Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Ultra High Speed Switching Application 1SS196 Unit: mm AEC-Q101 Qualified (Note1) Small package: SC-59 Low forward voltage: VF (3) = 0.90 V (typ.) Fast reverse recovery time: trr = 1.6 ns (typ.) Small total capacitance: CT = 0.9 pF (typ.) Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V .

1SS196_ToshibaSemiconductor.pdf