1SS198
Hitachi Semiconductor
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Silicon schottky barrier diode.
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1SS190 - Silicon Epitaxial Planar Type Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS190
Ultra High Speed Switching Application
AEC-Q101 Qualified (Note1)
Small package
: SC-59
L.
1SS190 - Switching Diodes
(LGE)
1. N.C 2. CATHODE 3. ANODE
Features
Low forward voltage
: VF(3)=0.92V(typ.)
Fast reverse recovery time : trr=1.6ns(typ.)
MARKING: E3
Maximum.
1SS190 - SWITCHING DIODE
(RECTRON)
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 SWITCHING DIODE
1SS190
FEATURES
* Power dissipation PD: 150 mW(Tamb=25OC)
* Forward current IF:.
1SS190 - SWITCHING DIODE
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS190
Switching Diode
FEATURES y Low forward voltage y Fast r.
1SS190 - Surface mount switching diode
(GME)
Production specification
Surface mount switching diode
FEATURES
Low forward voltage VF=0.92V(typ).
Small total capacitance:CT=2.2pF(typ). Fast.
1SS190 - SURFACE MOUNT FAST SWITCHING DIODE
(LITE-ON)
SURFACE MOUNT FAST SWITCHING DIODE
1SS190
REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere
FEATURES
• Fast Switching Speed • For general purp.
1SS190 - SURFACE MOUNT FAST SWITCHING DIODE
(WON-TOP)
® WON-TOP ELECTRONICS
1SS190
SURFACE MOUNT FAST SWITCHING DIODE
Pb
Features
High Conductance
Fast Switching Surface Mount Package Ideally Suit.
1SS190 - DIODE
(WEJ)
RoHS
1SS190 SWITCHING DIODE
SOT-23 Plastic-Encapsulate DIODE
DFeatures TPower dissipation
PD : 150 mW (Tamb=25oC)
.,LForward Current IF : 100 mA Re.
1SS190 - Surface Mount Switching Diodes
(WEITRON)
Surface Mount Switching Diodes
P b Lead(Pb)-Free
Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * Hig.
1SS193 - Silicon Epitaxial Planar Type Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS193
Ultra High Speed Switching Application
AEC-Q101 Qualified (Note1)
Small package
: SC-59
.
