1SS120
Hitachi Semiconductor
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Silicon diode.
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1SS120 - HIGH SPEED SWITCHING DIODE
(EIC)
.eicsemi.
1SS120
FEATURES :
• High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V.
1SS123 - SILICON SWITCHING DIODE
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(XIN SEMICONDUCTOR)
XIN SEMICONDUCTOR
ISO9002
1SS101 THUR 1SS301
SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY
FEATURES
For general purpo.
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1SS106 - Silicon Schottky Barrier Diode
(Hitachi Semiconductor)
1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-153A (Z) Rev. 1 Oct. 1998 Features
• Detection efficiency is.
1SS106 - SILICON SCHOTTKY BARRIER DIODE
(SEMTECH)
1SS106
SILICON SCHOTTKY BARRIER DIODE
for various detector, high speed switching
Features • Detection efficiency is very good. • Small temperature coe.
1SS106 - Silicon Schottky Barrier Diode
(Renesas)
1SS106
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
REJ03G0125-0200Z (Previous: ADE-208-153A)
Rev.2.00 Oct.23.2003
Featur.
1SS106 - SMALL SIGNAL SCHOTTKY DIODES
(JINAN JINGHENG ELECTRONICS)
R SEMICONDUCTOR
1SS106
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Detection effciency is very good Small temperature coefficient High reliability with g.
1SS108 - Silicon Schottky Barrier Diode
(Hitachi Semiconductor)
1SS108
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
ADE-208-154A (Z) Rev. 1 Features
• Detection efficiency is very good.