1SV322 Datasheet - Toshiba Semiconductor

1SV322 Silicon Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SV322 1SV322 TCXO/VCO High capacitance ratio: C1V / C4V = 4.3 (typ.) Low series resistance: rs = 0.4 Ω (typ.) Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg 55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/cu.

1SV322 Datasheet (137.81 KB)