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1SV322 Silicon Diode

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Description

TOSHIBA Diode Silicon Epitaxial Planar Type 1SV322 1SV322 TCXO/VCO * High capacitance ratio: C1V / C4V = 4.3 (typ.) * Low series re.

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* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

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Toshiba Semiconductor 1SV322-like datasheet