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1SV322 Datasheet - Toshiba Semiconductor

1SV322_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SV322

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

137.81 KB

Description:

Silicon diode.

1SV322, Silicon Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SV322 1SV322 TCXO/VCO High capacitance ratio: C1V / C4V = 4.3 (typ.) Low series resistance: rs = 0.4 Ω (typ.) Useful for small size tuner.

Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg 55 to 125 °C Note: Using continuously under heavy loads (e.g.

the application of high temperature/cu

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