1SV322
Toshiba ↗ Semiconductor
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Silicon diode.
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV322
1SV322
TCXO/VCO
* High capacitance ratio: C1V / C4V = 4.3 (typ.)
* Low series re.
📁 Related Datasheet
1SV323 - Silicon Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV323
1SV323
TCXO/VCO
• High capacitance ratio: C1V / C4V = 4.3 (typ.) • Low series resistance: rs = 0.
1SV324 - Silicon Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV324
1SV324
TCXO/VCO
• High capacitance ratio: C1V / C4V = 4.3 (typ.) • Low series resistance: rs = 0.
1SV325 - Silicon Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV325
1SV325
TCXO/VCO
• High capacitance ratio: C1V / C4V = 4.3 (typ.) • Low series resistance: rs = 0.
1SV328 - Silicon Diode
(Toshiba Semiconductor)
1SV328
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV328
VCO for UHF Band Radio
· · · High capacitance ratio: C1 V/C4 V = 2.8 (typ.) Low series resi.
1SV329 - Silicon Diode
(Toshiba Semiconductor)
1SV329
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV329
VCO for UHF Band Radio
· · · High capacitance ratio: C1 V/C4 V = 2.8 (typ.) Low series resi.
1SV302 - Variable Capacitance Diode
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV302
CATV Tuning
· High capacitance ratio: C2 V/C25 V = 17.5 (typ.) · Low series r.
1SV303 - Variable Capacitance Diode
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV303
CATV Tuning
· High capacitance ratio: C2 V/C25 V = 17.5 (typ.) · Low series r.
1SV304 - Variable Capacitance Diode
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV304
1SV304
VCO for VHF Band Radio
• Small package • High capacitance ratio: C1 .
