1SV329 Datasheet (Toshiba Semiconductor)

1SV329, Silicon Diode

1SV329 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV329 VCO for UHF Band Radio High capacitance ratio: C1 V/C4 V = 2.8 (typ.) Low series resistance: rs = 0.55 Ω (typ.) Useful for small size tuner.

Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1G1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse