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1SV325 Silicon Diode

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Description

TOSHIBA Diode Silicon Epitaxial Planar Type 1SV325 1SV325 TCXO/VCO * High capacitance ratio: C1V / C4V = 4.3 (typ.) * Low series re.

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* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

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Toshiba Semiconductor 1SV325-like datasheet