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1SV325 Silicon Diode

1SV325 Description

TOSHIBA Diode Silicon Epitaxial Planar Type 1SV325 1SV325 TCXO/VCO * High capacitance ratio: C1V / C4V = 4.3 (typ.) * Low series re.

1SV325 Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

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Silicon Diode Toshiba Semiconductor
Toshiba Semiconductor 1SV325-like datasheet