1SV325
Toshiba ↗ Semiconductor
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Silicon diode.
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV325
1SV325
TCXO/VCO
* High capacitance ratio: C1V / C4V = 4.3 (typ.)
* Low series re.
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TOSHIBA Diode Silicon Epitaxial Planar Type
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• High capacitance ratio: C1V / C4V = 4.3 (typ.) • Low series resistance: rs = 0.
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1SV328
TOSHIBA Diode Silicon Epitaxial Planar Type
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1SV329
TOSHIBA Diode Silicon Epitaxial Planar Type
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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
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