1SV328 Datasheet - Toshiba Semiconductor

1SV328 Silicon Diode

1SV328 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV328 VCO for UHF Band Radio High capacitance ratio: C1 V/C4 V = 2.8 (typ.) Low series resistance: rs = 0.55 Ω (typ.) Useful for small size tuner. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1E1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse.

1SV328_ToshibaSemiconductor.pdf