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2SC2655 Datasheet - Toshiba Semiconductor

2SC2655 - Silicon NPN TRANSISTOR

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 μs (typ.) Complementary to 2SA1020.

Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V

2SC2655_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SC2655

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

148.31 KB

Description:

Silicon npn transistor.

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