2SC2982 Datasheet - Toshiba Semiconductor

2SC2982 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications 2SC2982 Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A) Low saturation voltage : VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complement.

2SC2982_ToshibaSemiconductor.pdf