2SC2987A Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC2987A .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min). Good Linearity of hFE. Complement to Type 2SA1227A APPLICATIONS. For aud.

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Datasheet Specifications

Part number: 2SC2987A
Manufacturer: Inchange Semiconductor
File Size: 82.45 KB
Datasheet: 2SC2987A-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 12 A ICP Collector Current-Pulse P

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2SC2987A Silicon NPN Power Transistor Inchange Semiconductor

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