2SC2987A Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

2SC2987A

Manufacturer:

Inchange Semiconductor

File Size:

82.45kb

Download:

📄 Datasheet

Description:

Silicon npn power transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) *Good Linearity of hFE *Complement to Type 2SA1227A APPLICATIONS *For au

TAGS

2SC2987A

Inchange Semiconductor

📁 Related Datasheet

2SC2987 - PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR (ETC)
.. DataShee . . DataSheet 4 U . .

2SC2987 - Silicon power Transistor (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon NPN Power Transistors 2SC2987 DESCRIPTION ·With TO-3PN package ·Complemen.

2SC2987A - PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR (ETC)
.. DataShee . . DataSheet 4 U . .

2SC2981 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Collector-Emitter Saturation Voltage- : V.

2SC2981 - Silicon power Transistor (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltatge ·High s.

2SC2982 - Silicon NPN Transistor (Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications 2SC2982 Unit: mm .

2SC2982 - Transistor (Kexin)
SMD Type Medium Power Amplifier Applications 2SC2982 Transistors Features Low Saturation Voltage : VCE(sat) = 0.5V (max) (IC = 2A, IB = 50mA) Small .

2SC2982 - Transistor (TY Semiconductor)
SMD Type Product specification 2SC2982 Features Low Saturation Voltage : VCE(sat) = 0.5V (max) (IC = 2A, IB = 50mA) Small Flat Package Complementary.

2SC2983 - Silicon NPN Transistor (Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications 2SC2983 Unit: mm.

2SC2983 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% ava.