2SC2983 Datasheet - Toshiba Semiconductor

2SC2983 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications 2SC2983 Unit: mm High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1225 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 5 V Collector current Base current Collector power dissipation Ta = 25°C T.

2SC2983_ToshibaSemiconductor.pdf