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2SC2981 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Fast S.

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Datasheet Specifications

Part number
2SC2981
Manufacturer
INCHANGE
File Size
186.17 KB
Datasheet
2SC2981-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for high-voltage, high-speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A

2SC2981 Distributors

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INCHANGE 2SC2981-like datasheet