2SC2911 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SC2911 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min). Good Linearity of hFE. High Switching Speed. Complement to Type 2SA1209.

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Datasheet Specifications

Part number: 2SC2911
Manufacturer: Inchange Semiconductor
File Size: 196.12 KB
Datasheet: 2SC2911-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for high-voltage switching and AF 100W predriver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 140 mA

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2SC2911 Silicon NPN Power Transistor Inchange Semiconductor

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