2SC5404
Toshiba ↗ Semiconductor
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Npn transistor.
2SC5404
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5404
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEE.
📁 Related Datasheet
2SC5404 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3P(H)IS package .. ·High voltage;hi.
2SC5404 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
：VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damp.
2SC5405 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5405
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
Unit: mm
s Features.
2SC5406 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5406, 2SC5406A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High brea.
2SC5406A - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5406, 2SC5406A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High brea.
2SC5407 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5407
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown volt.
2SC5407 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minim.
2SC5408 - NPN TRANSISTOR
(NEC)
PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5408
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
FEATURE
• High fT 17 GHz T.
