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2SC5460 Datasheet - Toshiba Semiconductor

2SC5460 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications 2SC5460 Unit: mm High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 800 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation Ta = 25°.

2SC5460 Datasheet (126.30 KB)

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Datasheet Details

Part number:

2SC5460

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

126.30 KB

Description:

Npn transistor.

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2SC5460 NPN TRANSISTOR Toshiba Semiconductor

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