2SK170 Datasheet - Toshiba Semiconductor

2SK170 - Silicon N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 2SK170 Low Noise Audio Amplifier Applications Unit: mm Recommended for first stages of EQ and M.C. head amplifiers. High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) High breakdown voltage: VGDS = 40 V Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) High input impedance: IGSS = 1 nA (max) (VGS = 30 V) Ab.

2SK170_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK170

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

313.63 KB

Description:

Silicon n-channel mosfet.

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2SK170 Silicon N-Channel MOSFET Toshiba Semiconductor