Datasheet Details
- Part number
- 2SK170
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 313.63 KB
- Datasheet
- 2SK170_ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel MOSFET
2SK170 Description
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 2SK170 Low Noise Audio Amplifier Applications Unit: mm * Recommende.
2SK170 Applications
* Unit: mm
* Recommended for first stages of EQ and M. C. head amplifiers.
* High |Yfs|: |Yfs| = 22 mS (typ. ) (VDS = 10 V, VGS = 0, IDSS = 3 mA)
* High breakdown voltage: VGDS =
* 40 V
* Low noise: En = 0.95 nV/Hz1/2 (typ. )
(VDS = 10 V, ID = 1 mA, f = 1 kHz)
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