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2SK208 Datasheet - Toshiba Semiconductor

2SK208 Silicon N Channel Junction Type Field Effect Transistor

2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) Small package. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissi.

2SK208_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK208

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

287.46 KB

Description:

Silicon n channel junction type field effect transistor.

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2SK208 2SK208 Silicon Channel Junction Type Field Effect Transistor Toshiba Semiconductor

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