2SK2611 Datasheet - Toshiba Semiconductor

2SK2611 Silicon N-Channel MOSFET

2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2611 DC DC Converter, Relay Drive and Motor Drive Applications z Low drain source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 1.2 Ω (typ.) : |Yfs| = 7.0 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 720 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain source.

2SK2611 Features

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2SK2611_ToshibaSemiconductor.pdf