2SK2613 N-Channel MOSFET

Toshiba Semiconductor

Description

www.DataSheet4U.com 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC C.

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Datasheet Specifications

Part number: 2SK2613
Manufacturer: Toshiba ↗ Semiconductor
File Size: 251.64 KB
Datasheet: 2SK2613_ToshibaSemiconductor.pdf
Description: N-Channel MOSFET

Applications

* DC-DC Converter and Motor Drive Applications
* Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ. ) High forward transfer admittance: ïYfsï = 6.0 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 800 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit:

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2SK2613 N-Channel MOSFET Toshiba Semiconductor

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