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2SK2613 Datasheet - Toshiba Semiconductor

2SK2613 N-Channel MOSFET

www.DataSheet4U.com 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ïYfsï = 6.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 800 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-sou.

2SK2613_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK2613

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

251.64 KB

Description:

N-channel mosfet.

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