2SK2602 Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSV) 2SK2602 Switching Regulator Applications z Low drain *sour.

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Datasheet Specifications

Part number: 2SK2602
Manufacturer: Toshiba ↗ Semiconductor
File Size: 407.40 KB
Datasheet: 2SK2602_ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Features

* representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assume

Applications

* z Low drain
* source ON-resistance : RDS (ON) = 0.9 Ω (typ. ) z High forward transfer admittance : |Yfs| = 5.5 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Char

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Silicon N-Channel MOSFET Toshiba Semiconductor

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