2SK2602 Datasheet - Toshiba Semiconductor

2SK2602 Silicon N-Channel MOSFET

2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2602 Switching Regulator Applications z Low drain source ON-resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain source voltage Drain .

2SK2602 Features

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2SK2602 Datasheet (407.40 KB)