2SK2602 Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSV) 2SK2602 Switching Regulator Applications z Low drain *sour.

📥 Download Datasheet

2SK2602 Datasheet Preview — Preview of 2SK2602 PDF

Datasheet Specifications

Part number: 2SK2602
Manufacturer: Toshiba ↗ Semiconductor
File Size: 407.40 KB
Datasheet: 2SK2602_ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Features

* representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assume

Applications

* z Low drain
* source ON-resistance : RDS (ON) = 0.9 Ω (typ. ) z High forward transfer admittance : |Yfs| = 5.5 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Char

2SK2602 Distributors

📁 Related Datasheet

2SK260 2SK2608 2SK2611 2SK2616 2SK2617ALS 2SK2617LS

📌 All Tags

2SK2602 Silicon N-Channel MOSFET Toshiba Semiconductor

Toshiba Semiconductor 2SK2602-like datasheet