Datasheet4U Logo Datasheet4U.com

2SK2602 - Silicon N-Channel MOSFET

2SK2602 Description

2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSV) 2SK2602 Switching Regulator Applications z Low drain *sour.

2SK2602 Features

* representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assume

2SK2602 Applications

* z Low drain
* source ON-resistance : RDS (ON) = 0.9 Ω (typ. ) z High forward transfer admittance : |Yfs| = 5.5 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Char

📥 Download Datasheet

Preview of 2SK2602 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • 2SK260 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK2608 - N-Channel MOSFET (INCHANGE)
  • 2SK2611 - Silicon N-Channel MOSFET (WINSEMI SEMICONDUCTOR)
  • 2SK2616 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • 2SK2617ALS - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • 2SK2617LS - N-Channl Silicon MOSFET (Sanyo Semicon Device)
  • 2SK2618ALS - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • 2SK2618LS - N-Channel Silicon MOSFET (Sanyo Semicon Device)

📌 All Tags

Toshiba Semiconductor 2SK2602-like datasheet