2SK2604 Datasheet - Toshiba Semiconductor

2SK2604, Silicon N-Channel MOSFET

2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSIII) 2SK2604 Switching Regulator

Applications

* Unit: mm l Low drain
* source ON resistance : RDS (ON) = 1.9 Ω (typ.
) l High forward transfer admittance : |Yfs| = 3.8 S (typ.
) l Low leakage current : IDSS = 100 µA (max) (VDS = 640 V) l Enhancement
* mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Ch

2SK2604_ToshibaSemiconductor.pdf