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2SK2604 Datasheet - Toshiba Semiconductor

2SK2604 Silicon N-Channel MOSFET

2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2604 Switching Regulator Applications Unit: mm l Low drain source ON resistance : RDS (ON) = 1.9 Ω (typ.) l High forward transfer admittance : |Yfs| = 3.8 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 640 V) l Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Drain gate voltage .

2SK2604 Datasheet

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Datasheet Details

Part number:

2SK2604

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

253.80 KB

Description:

Silicon n-channel mosfet.

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2SK2604 Silicon N-Channel MOSFET Toshiba Semiconductor

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