2SK2604 Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSIII) 2SK2604 Switching Regulator Applications Unit: mm l Low drain.

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Datasheet Specifications

Part number: 2SK2604
Manufacturer: Toshiba ↗ Semiconductor
File Size: 253.80 KB
Datasheet: 2SK2604_ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Applications

* Unit: mm l Low drain
* source ON resistance : RDS (ON) = 1.9 Ω (typ. ) l High forward transfer admittance : |Yfs| = 3.8 S (typ. ) l Low leakage current : IDSS = 100 µA (max) (VDS = 640 V) l Enhancement
* mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Ch

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Silicon N-Channel MOSFET Toshiba Semiconductor

Toshiba Semiconductor 2SK2604-like datasheet