2SK2606 Datasheet - Toshiba Semiconductor

2SK2606 Silicon N-Channel MOSFET

2SK2606 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2606 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : |Yfs|= 7.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drai.

2SK2606 Datasheet (169.61 KB)