2SK2606 Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

2SK2606 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSIII) 2SK2606 DC *DC Converter, Relay Drive and Motor Drive Ap.

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Datasheet Specifications

Part number: 2SK2606
Manufacturer: Toshiba ↗ Semiconductor
File Size: 169.61 KB
Datasheet: 2SK2606_ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Applications

* Unit: mm z Low drain
* source ON resistance : RDS (ON) = 1.0 Ω (typ. ) z High forward transfer admittance : |Yfs|= 7.0 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Char

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2SK2606 Silicon N-Channel MOSFET Toshiba Semiconductor

Toshiba Semiconductor 2SK2606-like datasheet