2SK2603 Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

2SK2603 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSIII) 2SK2603 Chopper Regulator, DC *DC Converter and Motor Dr.

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Datasheet Specifications

Part number: 2SK2603
Manufacturer: Toshiba ↗ Semiconductor
File Size: 416.79 KB
Datasheet: 2SK2603_ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Features

* ase use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and

Applications

* Unit: mm z Low drain
* source ON resistance : RDS (ON) = 3.0 Ω (typ. ) z High forward transfer admittance : |Yfs| = 2.6 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Cha

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2SK2603 Silicon N-Channel MOSFET Toshiba Semiconductor

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