2SK2603 Datasheet - Toshiba Semiconductor

2SK2603, Silicon N-Channel MOSFET

2SK2603 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSIII) 2SK2603 Chopper Regulator, DC *DC Converter and Motor Dr

Features

* ase use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive.
TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and

Applications

* Unit: mm z Low drain
* source ON resistance : RDS (ON) = 3.0 Ω (typ.
) z High forward transfer admittance : |Yfs| = 2.6 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Cha

2SK2603_ToshibaSemiconductor.pdf