2SK2605 Datasheet - Toshiba Semiconductor

2SK2605, Silicon N-Channel MOSFET

2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSIII) 2SK2605 Switching Regulator

Applications

* Unit: mm z Low drain
* source ON resistance : RDS (ON) = 1.9 Ω (typ.
) z High forward transfer admittance : |Yfs| = 3.8 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) C

2SK2605_ToshibaSemiconductor.pdf