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2SK2889 Datasheet - Toshiba Semiconductor

2SK2889 Silicon N Channel MOS Type Field Effect Transistor

2SK2889 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2889 Chopper Regulator, DC DC Converter and Motor Drive Applications z Low drain source ON resistance : RDS (ON) = 0.54 Ω (typ.) z High forward transfer admittance : |Yfs| = 9.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDSS = 600 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Dr.

2SK2889 Features

* for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability

2SK2889 Datasheet (430.22 KB)

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Datasheet Details

Part number:

2SK2889

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

430.22 KB

Description:

Silicon n channel mos type field effect transistor.

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2SK2889 Silicon Channel MOS Type Field Effect Transistor Toshiba Semiconductor

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