2SK2885S - Silicon N-Channel MOSFET

Hitachi Semiconductor

Datasheet Details

Part number	2SK2885S
Manufacturer	Hitachi Semiconductor
File Size	38.65 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SK2885S_HitachiSemiconductor.pdf

Low on-resistance R DS(on) = 10mΩ typ.
4V gate drive devices.
High speed switching Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2885(L), 2SK2885(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C.

📁 2SK2885S Similar Datasheet

2SK2880 - N-Channel MOSFET (Isahaya Electronics)
2SK2881 - N-Channel Transistor (Isahaya Electronics)
2SK2882 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
2SK2883 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
2SK2884 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
2SK2886 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
2SK2887 - Switching Transistor (Rohm)
2SK2889 - Silicon N Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)

Other Datasheets by Hitachi Semiconductor

Published: Mar 30, 2005 |